Impact of advanced patterning options, 193nm and EUV, on local interconnect performance

The aim of this paper is to predict the performance of local interconnects, manufactured by advanced patterning options as double patterning and EUV lithography. Electrical wire parameters as resistance, capacitance, RC delay and coupling between adjacent wires are extracted by simulation from scaled 2-D interconnect models, calibrated with dimensions and electrical parameters measured on simple test structures. CD and overlay variations of each patterning option are estimated from experimental and ITRS data and are included in the models. The extracted wire parameters allow the comparison between the patterning options and indicate the optimal choice for the next technology nodes.