A modified model for resistivity of thin polysilicon films in the linear region on I-V characteristics

A new modified model for resistivity of thin polysilicon films is presented. This model takes into account the total depletion of polycrystalline grains. Especially, it is considered the case of the plasma hydrogenated polysilicon films, with exponentially distributed grain boundary trapping states. The comparison of the calculated dependencies of resistivity vs. dopant concentration and temperature with experimentally determined resistivity in linear region of I-V characteristics show satisfactory agreement, especially in lightly and moderately doped polysilicon.