An approximate evaluation of the threshold voltage of the metal-oxide-polysilicon structure

In this paper, it has been reported a modified procedure for approximate evaluation of threshold voltage of metal-oxide-polysilicon structure. This procedure is take into account the effect of totally depletion of polycrystalline grains. Also, it is assumed the case of the plasma hydrogenated polysilicon films, with exponentially distributed grain boundary trapping states. A number of calculated the threshold voltage dependencies on grain size, dopant concentration and temperature have been reported. This results can be used to determine the threshold voltage of polysilicon thin film transistors.