مرکز منطقه ای اطلاع رساني علوم و فناوري

DocumentCode :

3647828

Title :

Quantum approach to GaAs MESFETs

Author :

S. Sasic;R. Ramovic;D. Tjapkin

Volume :

fYear :

1997

Firstpage :

365

Abstract :

This paper is devoted to an original method of the determination of carrier distribution in a GaAs MESFET channel based on the investigation of the transport equation including a quantum correction term.

Keywords :

"Gallium arsenide","MESFETs","Poisson equations","Differential equations","Nonlinear equations","Quantum mechanics","Electrostatics","MOSFETs","Substrates","Voltage"

Publisher :

ieee

Conference_Titel :

Microelectronics, 1997. Proceedings., 1997 21st International Conference on

Print_ISBN :

0-7803-3664-X

Type :

conf

DOI :

10.1109/ICMEL.1997.625273

Filename :

625273

Link To Document :

https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3647828