Low-frequency noise in thick-film structures caused by traps in glass barriers

A model of low-frequency noise in thick-film structures, based on the close relationship of the noise and conduction mechanisms, is presented. The model takes into account the fluctuation of the electron trap during electron transport through the insulating layer by a tunnelling process. Numerical and experimental analyses of the voltage noise spectrum have shown that this noise source influences the level and shape of the noise spectra.