Title :
Tunnel injection GaN/AlN quantum dot UV LED
Author :
Jai Verma;Prem Kumar Kandaswamy;Vladimir Protasenko;Amit Verma;Huili Xing;Debdeep Jena
Author_Institution :
Department of Electrical Engineering, University of Notre Dame, IN 46556, USA
fDate :
6/1/2012 12:00:00 AM
Abstract :
In this work, the authors report on electroluminescence from 8 period self-assembled GaN QDs embedded in AIN barriers grown by plasma assisted molecular beam epitaxy (PAMBE), in SK growth mode, on commercially available AlN/sapphire templates.
Keywords :
"Light emitting diodes","Radiative recombination"
Conference_Titel :
Device Research Conference (DRC), 2012 70th Annual
Print_ISBN :
978-1-4673-1163-2
DOI :
10.1109/DRC.2012.6256947
