DocumentCode :
3647962
Title :
Terahertz detection and coherent imaging from 0.2 to 4.3 THz with silicon CMOS field-effect transistors
Author :
Alvydas Lisauskas;Sebastian Boppel;Dalius Seliuta;Linas Minkevicius;Irmantas Kašalynas;Gintaras Valušis;Viktor Krozer;Hartmut G. Roskos
Author_Institution :
Physikalisches Institut, Goethe-Universitä
fYear :
2012
fDate :
6/1/2012 12:00:00 AM
Firstpage :
1
Lastpage :
3
Abstract :
We summarize several lines of investigation of foundry-processed patch-antenna-coupled Si MOSFETs as plasmonic detectors of THz radiation. First, we explore detection at frequencies as high as 4.3 THz, about one hundred times higher than the transit-time-limited cut-off frequency of the devices, searching for the fundamental limits of the detection principle. Then, we address the much-debated issue of enhanced sensitivity by a current bias and conclude that - because of the increased noise - there is no net gain in signal-to-noise ratio. Finally, we simulate operation of a 100×100-pixel heterodyne camera, working with a few detectors of a focal-plane array and quasi-optical coupling of the local-oscillator radiation, and show that real-time operation of a camera should be possible with a dynamic range of 30 dB for a quarter-milliwatt local-oscillator power.
Keywords :
"Detectors","Imaging","Transistors","Noise","Silicon","Sensitivity","Frequency measurement"
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
ISSN :
0149-645X
Print_ISBN :
978-1-4673-1085-7
Type :
conf
DOI :
10.1109/MWSYM.2012.6259599
Filename :
6259599
Link To Document :
بازگشت