• DocumentCode
    3648579
  • Title

    Analysis of FinFET technology on memories

  • Author

    E. Amat;A. Asenov;R. Canal;B. Cheng;J-Ll. Cruz;Z. Jakšić;M. Miranda;A. Rubio;P. Zuber

  • Author_Institution
    Universitat Politè
  • fYear
    2012
  • fDate
    6/1/2012 12:00:00 AM
  • Firstpage
    169
  • Lastpage
    169
  • Abstract
    Summary form only given. Due to increased leakage currents and variability, classical bulk technology is reaching its scaling limits and some alternatives must be found. FinFETs are one of those alternatives. Through their 3D structure, they achieve better channel control which is the key to scalability. However, some sources of variability still remain. The impact of this technology shift on SRAM and DRAM memories is analyzed in this work.
  • Keywords
    "FinFETs","Computer architecture","Microprocessors","Random access memory","Fluctuations","Circuit stability","Stability analysis"
  • Publisher
    ieee
  • Conference_Titel
    On-Line Testing Symposium (IOLTS), 2012 IEEE 18th International
  • Print_ISBN
    978-1-4673-2082-5
  • Type

    conf

  • DOI
    10.1109/IOLTS.2012.6313866
  • Filename
    6313866
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3648579