DocumentCode
3648733
Title
Dynamical model for GaAs optical FETs in 0-120/spl deg/C temperature range
Author
R. Ramovic;R. Andrin;D. Grbovic
Author_Institution
Fac. of Electr. Eng., Belgrade Univ., Serbia
Volume
2
fYear
1997
Firstpage
493
Abstract
A dynamical thermal model of optical GaAs FET´s (OPFET) is presented in this paper. Based on physical behaviour of OPFET´s, we constructed a nonlinear thermal model for the built-in potential and using it we modeled the threshold voltage and source, drain and channel resistances. Based on these models and known temperature models for mobility and carrier velocity, a complete model for transfer and output characteristics is described. Based on this model, we simulated OPFET characteristics in the cased of turning the light on and off.
Keywords
"Gallium arsenide","FETs","Temperature distribution","MESFETs","Semiconductor process modeling","Optical films","Threshold voltage","Temperature dependence","Nonlinear optics","Optical refraction"
Publisher
ieee
Conference_Titel
Microelectronics, 1997. Proceedings., 1997 21st International Conference on
Print_ISBN
0-7803-3664-X
Type
conf
DOI
10.1109/ICMEL.1997.632876
Filename
632876
Link To Document