DocumentCode :
3648733
Title :
Dynamical model for GaAs optical FETs in 0-120/spl deg/C temperature range
Author :
R. Ramovic;R. Andrin;D. Grbovic
Author_Institution :
Fac. of Electr. Eng., Belgrade Univ., Serbia
Volume :
2
fYear :
1997
Firstpage :
493
Abstract :
A dynamical thermal model of optical GaAs FET´s (OPFET) is presented in this paper. Based on physical behaviour of OPFET´s, we constructed a nonlinear thermal model for the built-in potential and using it we modeled the threshold voltage and source, drain and channel resistances. Based on these models and known temperature models for mobility and carrier velocity, a complete model for transfer and output characteristics is described. Based on this model, we simulated OPFET characteristics in the cased of turning the light on and off.
Keywords :
"Gallium arsenide","FETs","Temperature distribution","MESFETs","Semiconductor process modeling","Optical films","Threshold voltage","Temperature dependence","Nonlinear optics","Optical refraction"
Publisher :
ieee
Conference_Titel :
Microelectronics, 1997. Proceedings., 1997 21st International Conference on
Print_ISBN :
0-7803-3664-X
Type :
conf
DOI :
10.1109/ICMEL.1997.632876
Filename :
632876
Link To Document :
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