• DocumentCode
    3648733
  • Title

    Dynamical model for GaAs optical FETs in 0-120/spl deg/C temperature range

  • Author

    R. Ramovic;R. Andrin;D. Grbovic

  • Author_Institution
    Fac. of Electr. Eng., Belgrade Univ., Serbia
  • Volume
    2
  • fYear
    1997
  • Firstpage
    493
  • Abstract
    A dynamical thermal model of optical GaAs FET´s (OPFET) is presented in this paper. Based on physical behaviour of OPFET´s, we constructed a nonlinear thermal model for the built-in potential and using it we modeled the threshold voltage and source, drain and channel resistances. Based on these models and known temperature models for mobility and carrier velocity, a complete model for transfer and output characteristics is described. Based on this model, we simulated OPFET characteristics in the cased of turning the light on and off.
  • Keywords
    "Gallium arsenide","FETs","Temperature distribution","MESFETs","Semiconductor process modeling","Optical films","Threshold voltage","Temperature dependence","Nonlinear optics","Optical refraction"
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics, 1997. Proceedings., 1997 21st International Conference on
  • Print_ISBN
    0-7803-3664-X
  • Type

    conf

  • DOI
    10.1109/ICMEL.1997.632876
  • Filename
    632876