Title :
SiGe BiCMOS Technologies for Applications above 100 GHz
Author :
H. Rücker;B. Heinemann;A. Fox
Author_Institution :
IHP, Frankfurt (Oder), Germany
Abstract :
This paper describes recent advances in SiGe HBT technology. Technological developments introduced for improved radio-frequency performance are discussed. HBT device characteristics are presented for a 0.13 μm SiGe BiCMOS technology with fT/fmax of 300/500 GHz and mini-mum CML ring oscillator gate delays of 2.0 ps. Sample circuit applications for operating frequencies above 100 GHz are discussed.
Keywords :
"Silicon germanium","Heterojunction bipolar transistors","BiCMOS integrated circuits","Current density","Gain","Logic gates","Delay"
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2012 IEEE
Print_ISBN :
978-1-4673-0928-8
DOI :
10.1109/CSICS.2012.6340061
