• DocumentCode
    3648989
  • Title

    Performance of InP/GaAsSb DHBTs Planarized with Teflon AF Compared to DHBTs with Airbridge Interconnects

  • Author

    R. Lövblom;R. Flückiger;M. Alexandrova;C. R. Bolognesi

  • Author_Institution
    Millimeter-Wave Electron. Group (MWE), ETH Zurich, Zü
  • fYear
    2012
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    We compare the DC and RF performance of InP/GaAsSb/InP DHBTs fabricated in a Teflon AF planarization process to identical DHBTs with airbridge interconnects. No statistically significant difference in performance was observed, proving that the Teflon AF layer does not degrade the devices. Multi-layer deposition and dry etching of Teflon AF were investigated to explore the suitability of Teflon AF as an interlevel dielectric in DHBT based MMICs.
  • Keywords
    "Indium phosphide","Double heterojunction bipolar transistors","Films","Silicon","Junctions","Planarization","Etching"
  • Publisher
    ieee
  • Conference_Titel
    Compound Semiconductor Integrated Circuit Symposium (CSICS), 2012 IEEE
  • ISSN
    1550-8781
  • Print_ISBN
    978-1-4673-0928-8
  • Type

    conf

  • DOI
    10.1109/CSICS.2012.6340085
  • Filename
    6340085
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3648989