Title :
Heavy Ion Sensitivity of 16/32-Gbit NAND-Flash and 4-Gbit DDR3 SDRAM
Author :
Kai Grürmann;Martin Herrmann;Fritz Gliem;Hagen Schmidt;Gilbert Leibeling;Heikki Kettunen;Véronique Ferlet-Cavrois
Author_Institution :
Inst. of Comput. &
fDate :
7/1/2012 12:00:00 AM
Abstract :
16/32-Gbit NAND-Flash and 4-Gbit DDR3 SDRAM memories have been tested under heavy ion irradiation. At high LET, 25nm NAND-Flash show MBUs at normal incidence. Techniques for SEFI mitigation in DDR3 SDRAM are studied.
Keywords :
"SDRAM","Plastics","Silicon","Performance evaluation","Single event upset","Surface treatment","Annealing"
Conference_Titel :
Radiation Effects Data Workshop (REDW), 2012 IEEE
Print_ISBN :
978-1-4673-2730-5
DOI :
10.1109/REDW.2012.6353718
