DocumentCode :
3649356
Title :
Photoexcited carrier transport in lnGaAsP/ InP quantum well laser structures
Author :
S. Marcinkevicius;U. Olin;K. Frojdh;J. Wallin;G. Landgren
fYear :
1994
fDate :
6/16/1905 12:00:00 AM
Firstpage :
366
Lastpage :
366
Keywords :
"Indium phosphide","Quantum well lasers","Photonic band gap","Electron traps","Physics","Laser theory","Wavelength measurement","Temperature","Optical pulse generation","Frequency"
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Europe, 1994 Conference on
Print_ISBN :
0-7803-1789-0
Type :
conf
DOI :
10.1109/CLEOE.1994.636647
Filename :
636647
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3649356