• DocumentCode
    3649512
  • Title

    Over-current and short-circuit protection for IGBT´s used in plasma generator inverter

  • Author

    Ionuţ Ciocan;Cristian Fărcaş;Dorin Petreuş;Niculaie Palaghiţă;Alin Grama

  • Author_Institution
    Applied Electronics Department, Faculty of Electronics, Telecommunications and Information Technology, Technical University of Cluj-Napoca Cluj-Napoca, Romania
  • fYear
    2012
  • Firstpage
    341
  • Lastpage
    345
  • Abstract
    The protection of the IGBT´s in the case of an over-current or a short-circuit, respects the general methodology of a power electronic device protection. Usually, every power device is protected by its driver, which becomes a multifunctional circuit capable of assuring the driving signal, monitoring the operation state as well as providing its protection. In this paper we propose and realize a protection driver based on monitoring the collector-to-emitter IGBT´s voltage. The driver is simulated in OrCAD PSpice and the practical implementation is used as a laboratory setup in the educational field. In this way the students can simulate and test the operation principle of an intelligent gate driver. The application is original and suitable for plasma generator inverters, because the system has to ensure minimum voltage to maintain the plasma on the active electrode, under extreme load conditions: "all" or "nothing".
  • Keywords
    "Insulated gate bipolar transistors","Plasmas","Transistors","Logic gates","Monitoring","Integrated circuit modeling","Generators"
  • Publisher
    ieee
  • Conference_Titel
    Design and Technology in Electronic Packaging (SIITME), 2012 IEEE 18th International Symposium for
  • Print_ISBN
    978-1-4673-4757-0
  • Type

    conf

  • DOI
    10.1109/SIITME.2012.6384405
  • Filename
    6384405