DocumentCode
3649747
Title
Optimized RTD-HBT VCO design based on large signal transient simulations
Author
B. Munstermann;A. Tchegho;G. Keller;F.-J Tegude
Author_Institution
Solid-State Electron. Dept., Univ. of Duisburg Essen, Duisburg, Germany
fYear
2012
Firstpage
32
Lastpage
35
Abstract
This paper presents an optimized RTD-HBT single ended voltage controlled oscillator topology with increased tuning range and improved frequency stability at 20 GHz oscillation frequency. By connecting the RTD to the emitter of an HBT, a larger voltage swing at the parallel resonator compared to the direct connection can be achieved. In addition the RTD-capacitance influence on the oscillation frequency can be suppressed efficiently. Transient assisted harmonic balance simulations promise an increased oscillation power by 2 dB and a doubled tuning range of about 3.2 GHz compared to the conventional RTD-HBT circuits.
Keywords
"Oscillators","Resonant frequency","Capacitance","Integrated circuit modeling","Tuning","Heterojunction bipolar transistors","Voltage measurement"
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials (IPRM), 2012 International Conference on
ISSN
1092-8669
Print_ISBN
978-1-4673-1725-2
Type
conf
DOI
10.1109/ICIPRM.2012.6403311
Filename
6403311
Link To Document