• DocumentCode
    3649747
  • Title

    Optimized RTD-HBT VCO design based on large signal transient simulations

  • Author

    B. Munstermann;A. Tchegho;G. Keller;F.-J Tegude

  • Author_Institution
    Solid-State Electron. Dept., Univ. of Duisburg Essen, Duisburg, Germany
  • fYear
    2012
  • Firstpage
    32
  • Lastpage
    35
  • Abstract
    This paper presents an optimized RTD-HBT single ended voltage controlled oscillator topology with increased tuning range and improved frequency stability at 20 GHz oscillation frequency. By connecting the RTD to the emitter of an HBT, a larger voltage swing at the parallel resonator compared to the direct connection can be achieved. In addition the RTD-capacitance influence on the oscillation frequency can be suppressed efficiently. Transient assisted harmonic balance simulations promise an increased oscillation power by 2 dB and a doubled tuning range of about 3.2 GHz compared to the conventional RTD-HBT circuits.
  • Keywords
    "Oscillators","Resonant frequency","Capacitance","Integrated circuit modeling","Tuning","Heterojunction bipolar transistors","Voltage measurement"
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials (IPRM), 2012 International Conference on
  • ISSN
    1092-8669
  • Print_ISBN
    978-1-4673-1725-2
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2012.6403311
  • Filename
    6403311