Sensitive high frequency envelope detectors based on triple barrier resonant tunneling diodes

InP-based resonant tunneling diodes with symmetrical I/V-characteristics have shown their excellent high frequency performance for THz signal generation. We present a modification with an additional third barrier to create an unsymmetrical I/V-characteristic. With their large current densities and low capacitances these devices are promising candidates for zero bias high frequency envelope detectors. Based on simulations two layer stacks are grown by MBE technology. The fabricated devices were measured at dc- and high frequencies. First measurement results for the short circuit responsivity are discussed.