DocumentCode :
3650394
Title :
Junction field-effect transistor based on GaAs core-shell nanowires
Author :
O. Benner;A. Lysov;C. Gutsche;G. Keller;C. Schmidt;W. Prost;F. J. Tegude
Author_Institution :
Solid State Electronics Department, University Duisburg-Essen, Germany
fYear :
2013
Firstpage :
1
Lastpage :
2
Abstract :
Nanowire FETs with all-around Junction-Gate are demonstrated using GaAs core-shell nanowires. The electrical properties of the n-channel Junction FET were determined by DC measurements. The radial pn-junctions show diode-type I-V characteristics. The output and transfer I-V characteristics exhibit good pinch-off, and hysteresis-free transient behavior. First devices with 190 nm nanowire channel diameter show a drain current of ID = 260 nA and a transconductance of gm = 300 nS.
Keywords :
"Nanowires","Gallium arsenide","Transistors","Logic gates","Current measurement","Dielectrics","Junctions"
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 2013 International Conference on
ISSN :
1092-8669
Print_ISBN :
978-1-4673-6130-9
Type :
conf
DOI :
10.1109/ICIPRM.2013.6562589
Filename :
6562589
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3650394
بازگشت