Two-Dinlensional Numerical Modeling of Interband Tunneling Accounting for Nonuniform Electric Field
Author :
P. Habas;A. Lugbauer;S. Selberherr
Author_Institution :
Institute for Microelectronics, Gusshausstrasse
fYear :
1992
fDate :
6/14/1905 12:00:00 AM
Firstpage :
135
Lastpage :
140
Keywords :
"Numerical models","Tunneling","Nonuniform electric fields","MOSFETs","Degradation","Microelectronics","Hot carriers","Geometry","Semiconductor process modeling","Photonic band gap"
Publisher :
ieee
Conference_Titel :
Numerical Modeling of Processes and Devices for Integrated Circuits, 1992. NUPAD IV. Workshop on
