DocumentCode :
3652324
Title :
An integrated switchable cascode RF power amplifier in GaN technology
Author :
David Seebacher;Wolfgang Bösch;Peter Singerl;Christian Schuberth
Author_Institution :
Graz Univ. of Technol., Graz, Austria
fYear :
2013
Firstpage :
1
Lastpage :
4
Abstract :
In this paper an integrated switchable cascode RF power amplifier (PA) will be presented. Modern communication standards use coding schemes with high peak to average power ratios (PAPR) therefore PA efficiency in back off is key to efficient transmitters. The proposed switchable cascode PA, which is based on a modified cascode structure, is capable of providing such an efficiency peak in back off. The operational principle is explained and a possible circuit implementation in GaN technology at 2.65 GHz is presented. At a maximum power of 2.74 W the circuit has a power added efficiency (PAE) of 65.4 % and at 0.57 W (6.7 dB backoff) a PAE of 60.2 %. In addition the combination with other efficiency enhancement methods such as baseband PWM or direct filter connection are covered.
Keywords :
"Transistors","Switches","Pulse width modulation","Logic gates","Impedance","Gallium nitride","Switching circuits"
Publisher :
ieee
Conference_Titel :
Microwave and RF Conference, 2013 IEEE MTT-S International
Type :
conf
DOI :
10.1109/IMaRC.2013.6777705
Filename :
6777705
Link To Document :
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