DocumentCode :
3653076
Title :
GaAs MESFET small signal amplifier intermodulation distortion improvement by the second harmonic termination
Author :
R. Nagy;J. Bartolic;B. Modlic
Author_Institution :
Fac. of Electr. Eng. & Comput., Zagreb Univ., Croatia
Volume :
1
fYear :
1998
Firstpage :
358
Abstract :
The third-order intermodulation distortion in small signal MESFET amplifier has been analysed by means of the Volterra series representation. Some of the results for reactively terminated amplifier ports at the second harmonic frequency are presented. It has been shown that the third-order IMD products are sensitive to the second harmonic reactances at the transistor input and output terminals.
Keywords :
"Gallium arsenide","MESFETs","Intermodulation distortion","Frequency","Impedance matching","Reflection","Circuit topology","Harmonic distortion","Harmonic analysis","Capacitance"
Publisher :
ieee
Conference_Titel :
Electrotechnical Conference, 1998. MELECON 98., 9th Mediterranean
Print_ISBN :
0-7803-3879-0
Type :
conf
DOI :
10.1109/MELCON.1998.692426
Filename :
692426
Link To Document :
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