• DocumentCode
    3653076
  • Title

    GaAs MESFET small signal amplifier intermodulation distortion improvement by the second harmonic termination

  • Author

    R. Nagy;J. Bartolic;B. Modlic

  • Author_Institution
    Fac. of Electr. Eng. & Comput., Zagreb Univ., Croatia
  • Volume
    1
  • fYear
    1998
  • Firstpage
    358
  • Abstract
    The third-order intermodulation distortion in small signal MESFET amplifier has been analysed by means of the Volterra series representation. Some of the results for reactively terminated amplifier ports at the second harmonic frequency are presented. It has been shown that the third-order IMD products are sensitive to the second harmonic reactances at the transistor input and output terminals.
  • Keywords
    "Gallium arsenide","MESFETs","Intermodulation distortion","Frequency","Impedance matching","Reflection","Circuit topology","Harmonic distortion","Harmonic analysis","Capacitance"
  • Publisher
    ieee
  • Conference_Titel
    Electrotechnical Conference, 1998. MELECON 98., 9th Mediterranean
  • Print_ISBN
    0-7803-3879-0
  • Type

    conf

  • DOI
    10.1109/MELCON.1998.692426
  • Filename
    692426
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3653076