Title :
Introduction to the proto-type plasma jets of AC, RF, and MW-discharges in Korea Plasma-Bio Research Center
Author :
Yunjung Kim; Guangsup Cho; Gook-Hee Han; Gi-Ghung Kwon; Jin-Joo Choi; Young-Ho Na; Han Sup Uhm; Eun-Ha CHoi
Author_Institution :
Department of Electrophysics, Kwangwoon University, 447-1 Wallgye-Dong, Nowon-Gu, Seoul 139-701 Korea
fDate :
5/1/2014 12:00:00 AM
Abstract :
The various types of atmospheric pressure plasma jets (APPJs) have been developed as the proto-type of user friend in Plasma-Bio Research Center (PBRC), Korea. According to the power sources the discharge-types are DC & a low frequency AC, RF, and micro-wave. (i) The plasma jet devices of DC-type and DBD-types have been made as the portable hand-carriers using DC-battery installed. (ii) AC-type jets with the frequency of a few tens of kHz have been developed with respect to the miniature and user-friend with the electric-safety using for the applications of human body and biology. In the proto-type device for the biomedicine applications the current is adjustable in the range from the low current of 0.1 mA to the high current of a few mAs. The inert gases or mixed gases are used. Especially, for the applications of semiconductor doping process, the single channel and the multi-channel of jet-doping systems are developed in the current range of a few or several tens of mA. (iii) RF-plasma jet is introduced with the power of 13.56 MHz. The RF power is adjustable in the range less than 100 W. The single channel of the proto-type device is shown with the discharge of inert gas for the biomedicine applications. (iv) Two-types of MW-plasma jets are developed. One is the proto-type MW-jet equipped with the miniature power source of semiconductor circuit which has been developed in this study. The frequency range is several hundreds of MHz and the power is adjustable in the range of several tens of Watt. The harmonic-tuned power amplifier of the oscillator was designed for improving drain efficiency with a single Laterally Diffused Metal Oxide Semiconductor (LDMOS) transistor using a non-linear harmonic balance simulation code. The other is the high power MW-jet system with the commercial MW-power sources. This Microwave plasma was excited at 2.45 GHz frequency and 0.8 W average power with a pulse generating width of 20μs and pulse generating period 2500μs. For the various applications this system is adjustable with respect to the peak power, the duration of pulse generation, and the pulse width of microwave.
Keywords :
"Plasmas","Radio frequency","Gases","Microwave amplifiers","Microwave circuits","Microwave oscillators","Microwave transistors"
Conference_Titel :
Plasma Sciences (ICOPS) held with 2014 IEEE International Conference on High-Power Particle Beams (BEAMS), 2014 IEEE 41st International Conference on
Print_ISBN :
978-1-4799-2711-1
DOI :
10.1109/PLASMA.2014.7012383