Study of Neutron Soft Error Rate (SER) Sensitivity: Investigation of Upset Mechanisms by Comparative Simulation of FinFET and Planar MOSFET SRAMs

The assessment of the soft-error rate (SER) of semiconductor devices continues to be important, even with the adoption of FinFET devices which overcome some important limitations of planar MOSFETs. The study in this paper presents both theoretical and experimental results via advanced simulation techniques, to investigate the difference between planar and FinFET devices in terms of SER. Neutron test results from different facilities are presented, and the observed differences in sensitivity are explained through theoretical analysis. In the second half of the paper, the test results are validated through TCAD and TFIT simulations using a calibrated technology response model. The analysis shows that the reduction in sensitivity of FinFET devices is primarily due to an increase in the threshold LET and a reduction in the sensitive volume due the shape of the transistor.