DocumentCode :
3656632
Title :
Assessment of SiC diode performance in non-isolated converters for LED lighting applications
Author :
Olegs Tetervenoks;Ilya Galkin
Author_Institution :
Institute of Industrial Electronics and Electrical Engineering, Riga Technical University, Riga, Latvia
fYear :
2015
fDate :
5/1/2015 12:00:00 AM
Firstpage :
193
Lastpage :
196
Abstract :
Today SiC Schottky diodes are becoming less expensive and more affordable in the market of electronic components. However, the price is still higher in comparison with common fast and ultrafast diodes with the same current and voltage rating. The main aim of this research is to find are the SiC diodes more advantageous in non-isolated converters for LED applications. From the one side SiC diodes have extremely fast reverse recovery time (reduced switching losses), from the other side they have higher forward voltage drop (higher conduction losses). In this case the evaluation of loss distribution between the conduction and switching losses is very important. This distribution may vary depending on topology, input-to-output voltage radio and output power. Several topologies are considered in the scope of this article: the most commonly used conventional buck topology, buck-boost topology and tapped-inductor topology.
Keywords :
"Light emitting diodes","Silicon carbide","Topology","Schottky diodes","Switching loss","Inductors","Reactive power"
Publisher :
ieee
Conference_Titel :
Power Engineering, Energy and Electrical Drives (POWERENG), 2015 IEEE 5th International Conference on
Print_ISBN :
978-1-4673-7203-9
Electronic_ISBN :
2155-5532
Type :
conf
DOI :
10.1109/PowerEng.2015.7266317
Filename :
7266317
Link To Document :
بازگشت