DocumentCode :
3658574
Title :
Transient voltage noise in charge-recycled power delivery networks for many-layer 3D-IC
Author :
Runjie Zhang;Kaushik Mazumdar;Brett H. Meyer;Ke Wang;Kevin Skadron;Mircea R. Stan
Author_Institution :
Dept. of Computer Science, University of Virginia, Charlottesville, USA
fYear :
2015
fDate :
7/1/2015 12:00:00 AM
Firstpage :
152
Lastpage :
158
Abstract :
Aside from the benefits it brings, 3D-IC technology inevitably exacerbates the difficulty of power delivery with volumetrically increasing power consumption. Recent work managed to “recycle” current within the 3D stack by linking the different layers´ supply/ground nets into a series connection. This charge-recycled (also known as voltage-stacked, or V-S) scheme provides a scalable solution for 3D-IC´s power delivery because it supports an arbitrary number of layers with a constant off-chip current demand. Although prior work has studied the circuit implementation of a V-S power delivery network (PDN) and its current-reduction benefits, a whole-system evaluation of V-S PDNs´ transient voltage noise and a noise comparison between the V-S PDN and the traditional PDN are missing. In this paper, we build a system-level model to examine voltage-stacked 3D-ICs´ transient noise and explore the impact of different PDN design parameters and workload behaviors. Our results show that compared with the traditional PDN scheme, V-S provides stronger isolation for cross-layer noise interference, which in turn grants higher performance benefits for run-time noise mitigation techniques, such as dynamic margin adaptation. We observe that, compared with traditional PDNs, V-S PDNs provide up to 60% lower transient noise in the worst-case scenario. Furthermore, we show that V-S PDNs significantly reduce the packaging cost, because their noise is almost insensitive to the package impedance (e.g., a 300% impedance increase only raises worst-case noise by less than 0.3% Vdd).
Keywords :
"Stacking","Switches","Noise","Integrated circuit modeling","Resistance","DH-HEMTs","Transient analysis"
Publisher :
ieee
Conference_Titel :
Low Power Electronics and Design (ISLPED), 2015 IEEE/ACM International Symposium on
Type :
conf
DOI :
10.1109/ISLPED.2015.7273506
Filename :
7273506
Link To Document :
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