DocumentCode :
3658804
Title :
A field-based parasitic capacitance model with 3-D terminal and terminal fringe components
Author :
Aixi Zhang;Wei Zhao;Yue Hu;Jin He;Qingxing He;Lei Song;Haiqin Zhou;Yong Wu
Author_Institution :
Peking University Shenzhen SOC Key Laboratory, Shenzhen 518055, P. R. China
fYear :
2015
Firstpage :
166
Lastpage :
170
Abstract :
In this paper, a parasitic capacitance model for a single three-dimensional (3-D) wire above a plate is developed. The model decomposes electric field into various regions and gives solutions to each part. The total capacitance is the summation of all capacitance parts corresponding to the electric field distribution. The model´s physical base minimizes its complexity and error comparing to a traditional empirical fitting process. Verified by extensive COMSOL simulations, the model can accurately predict parasitic capacitance for a wide range of BEOL wire dimensions. Thus, it holds potential to be further investigated for circuit simulation and design.
Keywords :
"Decision support systems","Asia","Hafnium"
Publisher :
ieee
Conference_Titel :
Quality Electronic Design (ASQED), 2015 6th Asia Symposium on
Type :
conf
DOI :
10.1109/ACQED.2015.7274028
Filename :
7274028
Link To Document :
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