Advanced process technologies of 1S1R for high density cross point ReRAM

2Xnm cross point cell array of 1S1R has been investigated using advanced process technologies which include 1) a spacer to protect a selector material, 2) a selector to reduce sneak current, and 3) a resistor to have proper amount of oxygen vacancies (Vo). With such technologies optimization, the excellent bipolar 1S1R switching characteristics with low sneak current (300nA), low power operation (30μA), and high on/off ratio (>30) were acquired.