• DocumentCode
    3659148
  • Title

    Significance of kinetic-linkage of oxygen vacancy with SiO2/Si interface for SiO2-IL scavenging in HfO2 gate stacks

  • Author

    Xiuyan Li;Takeaki Yajima;Tomonori Nishimura;Akira Toriumi

  • Author_Institution
    Department of Materials Engineering, The University of Tokyo, Tokyo 113-8656, Japan
  • fYear
    2015
  • fDate
    6/1/2015 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    This work clarifies roles of substrate-Si in SiO2-IL scavenging in HfO2/SiO2/Si gate stack experimentally, and points out a coupling effect of oxygen vacancy (VO) with SiO2/Si interface from thermodynamic viewpoint.
  • Keywords
    "Hafnium compounds","Silicon","Substrates","Silicon carbide","Logic gates","Nonhomogeneous media","Kinetic theory"
  • Publisher
    ieee
  • Conference_Titel
    Silicon Nanoelectronics Workshop (SNW), 2015
  • Type

    conf

  • Filename
    7275282
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3659148