• DocumentCode
    3659150
  • Title

    Impact of H2, O2, and N2 anneals on atomic-scale surface flattening for 3-D Ge channel architecture

  • Author

    Yukinori Morita;Hiroyuki Ota;Meishoku Masahara;Tatsuro Maeda

  • Author_Institution
    Nanoelectronics Research Institute (NERI), National Institute of Advanced Industrial Sciences and Technology (AIST) Tsukuba West, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
  • fYear
    2015
  • fDate
    6/1/2015 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We evaluated atomic-scale surface morphology changes of Ge wafers after thermal flattening in H2, O2, and N2 gas ambient. Analysis of atomic force microscopy results revealed that the atomic steps and terraces of Ge were evident after annealing at over 500°C for 160 s. The atomistic surface morphologies varied with the different annealing atmospheres. Nearly uniform step-terrace structure due to the suppression of terrace etching was obtained on N2-annealed Ge surfaces.
  • Keywords
    "Surface morphology","Annealing","Rough surfaces","Surface roughness","Etching","Surface topography"
  • Publisher
    ieee
  • Conference_Titel
    Silicon Nanoelectronics Workshop (SNW), 2015
  • Type

    conf

  • Filename
    7275284
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3659150