Threshold voltage and current variability of extremely narrow silicon nanowire MOSFETs with width down to 2nm

The threshold voltage (V_TH) and on-current (I_ON) variability of extremely narrow silicon nanowire channel FETs is intensively measured and statistically analyzed. It is found that the Pelgrom coefficient (A_VT) of 7nm-wide nanowire FETs is much smaller than that of FDSOI FETs, while A_VT rapidly increases as the nanowire width decreases down to 2nm. The increase in variability is ascribed to V_TH fluctuations due to the quantum confinement effect induced by nanowire width fluctuations.