Title :
Performance of GAA poly-Si channel of junctionless field effect transistors with ultra-thin body
Author :
Yan-Bo Liu;Yi-Ruei Jhan;Cheng-Ping Wang;Yung-Chun Wu
Author_Institution :
Department of Engineering and System Science, National Tsing Hua University, Hsinchu, Taiwan
fDate :
6/1/2015 12:00:00 AM
Abstract :
Agate-all-around (GAA) with trench structure poly-Si channel junctionless Field-Effect Transistor (JL-FET) has been successfully demonstrated. This JL-FET shows excellent performance in a low drain-induced barrier lowering (DIBL), a steep Sub-threshold Swing (SS) ~70 mV/decade and high ION/IOFF (>108) ratio.
Keywords :
"Logic gates","Annealing","Lithography","Scanning electron microscopy","Performance evaluation","Doping","Silicon"
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2015
