Title :
Invetigation of reconfigurable silicon nanowire Schottky Barrier transistors-based logic gate circuits and SRAM cell
Author :
Juncheng Wang;Gang Du;Xiaoyan Liu
Author_Institution :
Institute of Microelectronics, Peking University, Beijing, 100871, China
fDate :
6/1/2015 12:00:00 AM
Abstract :
Reconfigurable Silicon nanowire Schottky Barrier transistors (RFETs) with configurability to be programmed as n/p-type polarity are promising for future integrated circuits. In this work, the tunable polarity characteristics of RFETs are investigated. TCAD simulations have been performed for RFETs-based INV, NOR, NAND logic gates and SRAM cell. 4-terminal RFETs presented show the potential of programmable circuits and high density integration.
Keywords :
"Logic gates","SRAM cells","Schottky barriers","Integrated circuit modeling","Transient analysis","Silicon","Transistors"
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2015