Impact of diffused donor-clusters near lead/channel boundary on high-temperature single-electron tunneling in narrow SOI-FETs

We study the effect of phosphorus donors diffused as clusters near the boundary between lead and channel of silicon-on-insulator field-effect transistors (SOI-FETs). In the narrowest-channel devices, one such P-donor-cluster can fully modulate single-electron tunneling transport up to elevated temperatures (>120 K). These results suggest the importance of properly designing the lead edges to enhance the tunneling-operation temperature of dopant-based nano-devices.