Title :
Resistive switching characteristics in HfOx memory devices with local electrical field design
Author :
Tsung-Kuei Kang;Wei-Len Chen;Yu-Han Chen;Pei-Hsun Tsai
Author_Institution :
Department of Electronic Engineering, Feng-Chia University, Taichung, Taiwan, R.O.C.
fDate :
6/1/2015 12:00:00 AM
Abstract :
The switching characteristics of the resistive switching memory with local electrical field are investigated. The local electrical fields in the HfOx film are created by some sharp regions of bottom electrode. Compared with planar structures, this design can improve the yield and uniformity of set/reset voltage for Pd/HfOx/TiN structure. Results indicate that the sample with spacer and raised structures can improve the switching characteristics.
Keywords :
"Hafnium compounds","Switches","Silicon","Films","Electrodes","Tin"
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2015
