Simultaneous two gate reflectometric spectroscopy of Si coupled donor-dot system

Gate-coupled reflectometric spectrometry has recently emerged as a tool for studies of transport in nanostructures. Here we report reflectometric spectroscopy of a double-gate single electron device in which two coupled quantum dots are formed under the gates. The spectroscopy is performed by detection of charging processes in the system using a dual port reflectometer. The potential application of this scheme for detection of qubits is also discussed.