Title :
Tunneling field-effect transistor with a grown Si epitaxial layer for boosting ON current
Author :
Junil Lee;Jang Hyun Kim;Dae Woong Kwon;Euyhwan Park;Tae Hyung Park;Byung-Gook Park
Author_Institution :
Inter-university Semiconductor Research Center (ISRC) and Department of Electrical and Computer Engineering, Seoul National University, Gwanak-ro, Gwanak-gu, Seoul 151-742, Republic of Korea
fDate :
6/1/2015 12:00:00 AM
Abstract :
In this paper, we propose an advanced tunneling field-effect transistor (TFET) structure. The fabrication method of proposed TFET is designed. The characteristics of the proposed TFET are investigated by device simulation.
Keywords :
"Tunneling","Silicon","Fabrication","Epitaxial growth","Silicon germanium","Transistors","Semiconductor process modeling"
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2015
