• DocumentCode
    3659169
  • Title

    Tunneling field-effect transistor with a grown Si epitaxial layer for boosting ON current

  • Author

    Junil Lee;Jang Hyun Kim;Dae Woong Kwon;Euyhwan Park;Tae Hyung Park;Byung-Gook Park

  • Author_Institution
    Inter-university Semiconductor Research Center (ISRC) and Department of Electrical and Computer Engineering, Seoul National University, Gwanak-ro, Gwanak-gu, Seoul 151-742, Republic of Korea
  • fYear
    2015
  • fDate
    6/1/2015 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In this paper, we propose an advanced tunneling field-effect transistor (TFET) structure. The fabrication method of proposed TFET is designed. The characteristics of the proposed TFET are investigated by device simulation.
  • Keywords
    "Tunneling","Silicon","Fabrication","Epitaxial growth","Silicon germanium","Transistors","Semiconductor process modeling"
  • Publisher
    ieee
  • Conference_Titel
    Silicon Nanoelectronics Workshop (SNW), 2015
  • Type

    conf

  • Filename
    7275303
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3659169