DocumentCode :
3659170
Title :
Short-drain effect of 5 nm tunnel field-effect transistors
Author :
Yu-Hsuan Chen;Nguyen Dang Chien;Jr-Jie Tsai;Yan-Xiang Luo;Chun-Hsing Shih
Author_Institution :
Department of Electrical Engineering, National Chi Nan University, Nantou 54561, Taiwan
fYear :
2015
fDate :
6/1/2015 12:00:00 AM
Firstpage :
1
Lastpage :
2
Abstract :
Unique short-drain effect was reported in extremely scaled tunnel field-effect transistors. This study numerically elucidated the short-drain effect and the difference between the short-channel and short-drain effects. For the short-drain effect, the off-state barriers reduce because of decreased drain lengths, generating ambipolar off-state current and degraded short-channel effect. The shorter channel is, the more pronounced is the short-drain effect.
Keywords :
"Logic gates","Transistors","Switches","Electrical engineering","Physics","Electronic mail"
Publisher :
ieee
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2015
Type :
conf
Filename :
7275304
Link To Document :
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