Title :
Bringing physics to device design — A fast and predictive device simulation framework
Author :
M. Karner;Z. Stanojević;F. Mitterbauer;C. Kernstock;H. Demel
Author_Institution :
Global TCAD Solutions GmbH., Landhausgasse 4/1a, 1010 Vienna, Austria
fDate :
6/1/2015 12:00:00 AM
Abstract :
We present a physically grounded modeling, simulation, and parameter-extraction framework that targets design and engineering of ultra-scaled devices and next-generation channel materials. The framework consists of a fast and accurate Schrödinger-Poisson solver/mobility extractor coupled to a device simulator. The framework brings physical modeling of semiconductor channels to device design and engineering which until now has been the domain of TCAD tools based on purely empirical models.
Keywords :
"Stress","Electric potential","Transistors","Logic gates","Numerical models","Couplings","Mathematical model"
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2015