DocumentCode :
3659181
Title :
Physics-based model for the conductive filament at the low resistance state of thin SiO2 films
Author :
Rintaro Yamaguchi;Shingo Sato;Yasuhisa Omura
Author_Institution :
Dpt. Electronics, Kansai University, Japan
fYear :
2015
fDate :
6/1/2015 12:00:00 AM
Firstpage :
1
Lastpage :
2
Abstract :
This paper proposes the possible physics-based model for the conductive filament (CF) at the low-resistance state (LRS) of thin SiO2 films that were formed by sputtering technique. The closed and analytical current models proposed here are examined by experimental results.
Keywords :
"Films","Electrodes","Substrates","Capacitors","Resistance","Sputtering","Silicon"
Publisher :
ieee
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2015
Type :
conf
Filename :
7275315
Link To Document :
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