Performance evaluation of Si ultra-thin body (1 nm) junctionless FET with LG = 1 nm and LG = 3 nm

A Si ultra-thin body (UTB) junctionless field-effect transistor (UTB-JLFET) with L_G = 1 nm and L_G = 3 nm have been demonstrated by solving the coupled drift-diffusion (DD) and density-gradient (DG) model. The simulation results show that the Si can be used in ultra-short channel device as long as UTB is employed. As UTB is employed, ultra-short channel device does not need to follow an empirical rule of T_ch = L_G / 3. Furthermore, UTB-JLFET 6T-SRAM cell has reasonable static noise margin (SNM) value of 138 mV. The circuit performances reveal UTB-JLFET can be used for sub-5 nm CMOS technology nodes.