Title :
Novel trigate field-plated poly-Si TFT with improved leakage current and high On/Off current ratio
Author :
Yong-Hong Syu;Hsin-Hui Hu;Jhen-Yu Tsai;Kai-Ming Wang;Jia-Jin Tsai
Author_Institution :
Department of Electronic Engineering, National Taipei University of Technology, Taipei 106, Taiwan, R.O.C.
fDate :
6/1/2015 12:00:00 AM
Abstract :
A metal field plate thin-film transistor combined with extended drift region is fabricated. In this study, the influence of different channel wire width (W0) and extended length (LEX) on off-state leakage current and on-state current are investigated. When extending the drift region, the electric field near drain is suppressed and the gate induced drain leakage (GIDL) is reduced. In addition, high on-state current can be observed when LEX=1.6 μm due to high electron density in the drift region.
Keywords :
"Thin film transistors","Electric fields","Logic gates","Junctions","Leakage currents","Metals","Wires"
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2015
