DocumentCode :
3659187
Title :
New features in planar SiGe channel tunnel FETs performance and operation
Author :
C. Le Royer;L. Hutin;S. Martinie;P. Nguyen;S. Barraud;F. Glowacki;S. Cristoloveanu;M. Vinet
Author_Institution :
CEA, LETI, MINATEC Campus, F-38054 Grenoble, France
fYear :
2015
fDate :
6/1/2015 12:00:00 AM
Firstpage :
1
Lastpage :
2
Abstract :
We report the characterization of SiGe Tunnel FETs (TFETs) fabricated on SGOI with a standard CMOS process. The large gain in saturation gain (x20) is due to the threshold voltage shift and to enhanced intrinsic band-to-band tunneling injection (both related to the narrow band gap of SiGe channels). We also investigate the ambipolar signature from the ID(VDS) of TFETs which we compare to MOSFETs. A simple protocol is proposed and validated to get a rapid insight in injection mechanism at the two junctions of any FET device.
Keywords :
"Silicon germanium","Photonic band gap","MOSFET circuits","Logic gates","Tunneling","MOSFET"
Publisher :
ieee
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2015
Type :
conf
Filename :
7275321
Link To Document :
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