Title :
Variation of Coulomb diamonds and excited states caused by electric field in Si single-electron transistor
Author :
Hikaru Satoh;Takafumi Uchida;Atsushi Tsurumaki-Fukuchi;Masashi Arita;Akira Fujiwara;Yasuo Takahashi
Author_Institution :
Graduate school of Information Science and Technology, Hokkaido University, Sapporo, 060-0814, Japan
fDate :
6/1/2015 12:00:00 AM
Abstract :
Small Si single-electron transistors (SETs) show interesting nature due to their complicated energy-level structure. We evaluate Coulomb diamonds and excited states of dual-gate SETs by changing an electric field in the SET island. Even though the number of electron in the SET island is constant, the electric field applied by the dual gates remarkably changes the electron addition energies. In addition, interesting variation of excited states due to the electric field are also observed.
Keywords :
"Silicon","Diamonds","Electric fields","Logic gates","Wave functions","Single electron transistors","Electrodes"
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2015
