N+/P shallow junction with high dopant activation and low contact resistivity fabricated by solid phase epitaxy method for Ge technology

In this paper, solid phase epitaxy (SPE) process is proposed to improve phosphorous activation and hence reduce the contact resistivity of n⁺/p junction for Ge n-MOS technology. Over 1×10²⁰ cm^-3 electrical concentration and about 1.75×10^-6 ohm·cm² contact resistivity have been achieved at P⁺ implantation of 10keV and 5×10¹⁴cm^-2 and annealing condition of 600°C, 10seconds. The fabricated N⁺/P diode shows 2 times higher forward current and well controlled leakage.