Title :
Evaluation of SiC BJTs for High-Power DC–DC Converters
Author :
Calderon-Lopez, G. ; Forsyth, A.J. ; Gordon, David L. ; McIntosh, J.R.
Author_Institution :
Sch. of Electr. & Electron. Eng., Univ. of Manchester, Manchester, UK
Abstract :
The design of a 200-A, all-SiC power-module-based on bipolar junction transistor devices is described, and the impact of the module is assessed on the performance of a 50-kW dc-dc converter for electric vehicle applications, particularly the overall weight and efficiency. Using a hard-switching dual-interleaved topology, which has proven high efficiency and high-power density capability, the operation of a 50-kW, 75-kHz all-SiC converter is compared with that of an insulated-gate bipolar transistor-based silicon converter, switching at 25 kHz, each providing 600-V output. The results show that the total losses are reduced by almost 40%, whilst the overall weight is reduced by 27%, achieving a power density of 10.5 kW/kg. Experimental results of the SiC converter operating at 220-600 V, 52.8 kW are provided, showing an efficiency of 97%.
Keywords :
DC-DC power convertors; electric vehicles; power bipolar transistors; power semiconductor devices; silicon compounds; wide band gap semiconductors; BJT; bipolar junction transistor; current 200 A; electric vehicle; frequency 25 kHz; frequency 75 kHz; hard-switching dual-interleaved topology; high-power DC-DC Converters; high-power density; insulated-gate bipolar transistor; power 50 kW; power 52.8 kW; power-module; silicon converter; voltage 220 V to 600 V; voltage 600 V; Insulated gate bipolar transistors; Loss measurement; Multichip modules; Silicon; Silicon carbide; Switches; Transistors; DC–DC converters; SiC BJT; interleaved converters; power module; silicon carbide (SiC);
Journal_Title :
Power Electronics, IEEE Transactions on
DOI :
10.1109/TPEL.2013.2273293
