An improved analytical IGBT model for loss calculation including junction temperature and stray inductance

An improved analytical model suitable for IGBT modules is proposed in this paper to calculate the power losses with high accuracy and short calculation time. In this model, the parameters varying with junction temperature of the modules, such as di/dt in the turn-on period and dv/dt in the turn-off period, are discussed and derived according to several equivalent models. In addition, the parasitic inductance in the circuit including the emitter and collector inductance in the power circuits and the gate inductance in the driving loop are considered in this model. Based on this proposed model, the simulation switching waveforms of collector currents and collector-emitter voltages are provided to verify the model. Meanwhile, the calculated power losses are confirmed to be precise by comparing with measurement results.