DocumentCode :
3662594
Title :
A 70°phase margin OPAMP with positive feedback in flexible a-IGZO TFT technology
Author :
R. Shabanpour;K. Ishida;T. Meister;N. Münzenrieder;L. Petti;G. Salvatore;B. Kheradmand-Boroujeni;C. Carta;G. Tröster;F. Ellinger
Author_Institution :
Technische Universitä
fYear :
2015
Firstpage :
1
Lastpage :
4
Abstract :
This paper presents a fully integrated operational amplifier (OPAMP) with positive feedback fabricated in a flexible amorphous indium gallium zinc oxide (a-IGZO) thin film transistor (TFT) technology. The OPAMP is implemented by using a 5 μm nMOS a-IGZO TFT process, and is operated from a dc supply voltage of 6 V. The circuit relies on positive feedback in the input differential pair to improve gain. The measured open-loop gain is 19 dB over a 3 dB bandwidth of 25 kHz with 70° PM (phase margin). The measured unity-gain frequency, output swing voltage, and dc power consumption are 330 kHz, 3.7 Vpp, and 6.78 mW, respectively. The total chip area of the proposed OPAMP is 4.2×6 mm2. To the best of our knowledge the proposed amplifier has the highest PM among OPAMPs in TFT technology.
Keywords :
"Thin film transistors","Gain","MOS devices","Frequency measurement","Threshold voltage"
Publisher :
ieee
Conference_Titel :
Circuits and Systems (MWSCAS), 2015 IEEE 58th International Midwest Symposium on
Type :
conf
DOI :
10.1109/MWSCAS.2015.7282051
Filename :
7282051
Link To Document :
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