• DocumentCode
    3662606
  • Title

    Contactless detection of faulty TSV in 3D IC via capacitive coupling

  • Author

    Iftekhar Ibne Basith;Rashid Rashidzadeh;Esam Abdel-Raheem

  • Author_Institution
    Department of Electrical and Computer Engineering, University of Windsor, ON, Canada
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    3D IC using Through Silicon Via (TSV) is a promising technology for next generation of integrated circuits. Manufacturing TSV defects like voids and pinholes have to be detected at the test phase to ensure fault free ICs. In this paper a contactless probe utilizing capacitive coupling is presented. The proposed method eliminates the impact of direct probing on TSV and supports the high-density and fine-pitch requirements for TSV probing. 3D full-wave simulations using HFSS and circuit level simulation using ADS show that common TSV defects such as voids and pinholes can be detected successfully.
  • Keywords
    "Circuit faults","Probes","Integrated circuit modeling","Three-dimensional displays","Testing","Through-silicon vias"
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems (MWSCAS), 2015 IEEE 58th International Midwest Symposium on
  • Type

    conf

  • DOI
    10.1109/MWSCAS.2015.7282065
  • Filename
    7282065