A perimeter gated single photon avalanche diode based silicon photomultiplier as optical detector

A CMOS silicon photomultiplier based on perimeter gated single photon avalanche diode was designed for optical detection applications. The photomultiplier was fabricated in a standard 0.5 μm 2 poly, 3 metal CMOS process. The perimeter gated single silicon photomultiplier shows an increase in breakdown voltage with increasing gate voltage. The noise floor of the detector was characterized as a function of applied gate bias and excess bias voltages. The sensitivity of the detector to incident optical illumination was characterized. The sensitivity of the detector is ~ 0.08A per W/cm².