• DocumentCode
    3662631
  • Title

    Switching characteristics of MgO based self-compliant ReRAM devices

  • Author

    Wenchao Lu;Wenbo Chen;Prem Thapaliya;Ryan O´ Dell;Rashmi Jha

  • Author_Institution
    Electrical Engineering and Computer Science Department, University of Toledo, OH, USA, 43606
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    We report the impact of titanium (Ti) and TiOx interfacial layers on switching characteristics of MgO based Resistive Random Access Memory (ReRAM) devices. The devices with Ti/MgO and Ti/TiOx/MgO bi-layer structures demonstrated bipolar resistive switching characteristics with self-compliance behavior and low set/reset voltages. Much lower self-compliance current was observed for Ti/TiOx/MgO devices compared to Ti/MgO devices. The mechanism behind this observation was explained based on oxygen ions and oxygen vacancies transport between TiOx and MgO layers.
  • Keywords
    "Switches","Metals","Random access memory","Performance evaluation","Voltage measurement","Resistance","Physics"
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems (MWSCAS), 2015 IEEE 58th International Midwest Symposium on
  • Type

    conf

  • DOI
    10.1109/MWSCAS.2015.7282090
  • Filename
    7282090
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3662631