Title :
Switching characteristics of MgO based self-compliant ReRAM devices
Author :
Wenchao Lu;Wenbo Chen;Prem Thapaliya;Ryan O´ Dell;Rashmi Jha
Author_Institution :
Electrical Engineering and Computer Science Department, University of Toledo, OH, USA, 43606
Abstract :
We report the impact of titanium (Ti) and TiOx interfacial layers on switching characteristics of MgO based Resistive Random Access Memory (ReRAM) devices. The devices with Ti/MgO and Ti/TiOx/MgO bi-layer structures demonstrated bipolar resistive switching characteristics with self-compliance behavior and low set/reset voltages. Much lower self-compliance current was observed for Ti/TiOx/MgO devices compared to Ti/MgO devices. The mechanism behind this observation was explained based on oxygen ions and oxygen vacancies transport between TiOx and MgO layers.
Keywords :
"Switches","Metals","Random access memory","Performance evaluation","Voltage measurement","Resistance","Physics"
Conference_Titel :
Circuits and Systems (MWSCAS), 2015 IEEE 58th International Midwest Symposium on
DOI :
10.1109/MWSCAS.2015.7282090
