Optimization of ON current in multilayer Molybdenum Disulfide (MoS2) based tunnel field effect transistor

Molybdenum Disulfide (MoS₂) has emerged has the new 2D super-material for post-silicon and beyond-graphene technologies. We have recently proposed the concept of a new tunneling mechanism based field effect transistor (TFET) using multilayer MoS₂ as the tunneling channel. In this paper, we focus on ways to improve the ON-current of the proposed MoS₂ based TFET. We have demonstrated that multilayer MoS₂ TFET has the potential to succeed conventional MOSFETs and overcome the fundamental thermionic barrier of the existing and emerging FETs due to the absence of the short-channel effects and the possibility of obtaining very steep subthreshold slope in the proposed TFET. Silicon based TFETs have limited potential due to lower ON current. Compared to silicon TFET, the proposed MoS₂ TFET would provide significantly higher ON current. This paper includes the development of an analytical model to determine the tunneling probability along the dominant tunnel path in the TFET. In particular, we have analyzed the impact of the doping density, gate voltage, oxide thickness, dielectric constant, and the length of the channel material to optimize the tunneling current in the ON state.